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• W2048699568 abstract "In III-V and II-VI semiconductors, certain nominally electron-donating impurities do not release electrons but instead form deep electron-traps known as DX centers. While in these compounds, such traps occur only after the introduction of foreign impurity atoms, we find from first-principles calculations that in ternary I-III-VI2 chalcopyrites like CuInSe2 and CuGaSe2, DX-like centers can develop without the presence of any extrinsic impurities. These intrinsic DX centers are suggested as a cause of the difficulties to maintain high efficiencies in CuInSe2-based thin-film solar-cells when the band gap is increased by addition of Ga." @default.
• W2048699568 created "2016-06-24" @default.
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• W2048699568 date "2008-01-03" @default.
• W2048699568 modified "2023-09-27" @default.
• W2048699568 title "Intrinsic<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi>D</mml:mi><mml:mi>X</mml:mi></mml:math>Centers in Ternary Chalcopyrite Semiconductors" @default.
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• W2048699568 doi "https://doi.org/10.1103/physrevlett.100.016401" @default.
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