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• W2048748468 abstract "We present a versatile procedure for the fabrication of single electron transistor (SET) devices with nanometer-sized clusters and embedded back gate electrode. The process uses sputtering gas-aggregation for the growth of clusters and e-beam lithography with double angle shadow-edge deposition to obtain electrodes separated by nano-gaps with width below 10 nm. The nano-gap width is easily controlled only by geometrical factors such as deposited thin film thickness and evaporation angles. The usefulness of this technique is demonstrated by measuring the SET behavior of a device with a 4 nm cobalt cluster embedded in alumina, where the Coulomb blockade and incremental cluster charging can be readily identified without resorting to the differential conductivity." @default.
• W2048748468 created "2016-06-24" @default.
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• W2048748468 date "2014-02-17" @default.
• W2048748468 modified "2023-10-13" @default.
• W2048748468 title "Sub-10 nm nano-gap device for single-cluster transport measurements" @default.
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• W2048748468 doi "https://doi.org/10.1063/1.4865814" @default.
• W2048748468 hasPublicationYear "2014" @default.
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