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- W2048866563 abstract "Laser molecular beam epitaxy technology has been employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, (2¯01)-oriented β-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared β-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality β-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors." @default.
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- W2048866563 date "2014-05-01" @default.
- W2048866563 modified "2023-10-15" @default.
- W2048866563 title "Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology" @default.
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- W2048866563 doi "https://doi.org/10.1364/ome.4.001067" @default.
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