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- W2048885918 abstract "The modeling study of gate-bias-stress-induced threshold voltage shift (ΔV th ) in amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) is reported. According to the total number of tunneled carriers and the probability in tunneling, saturated ΔV th is obtained, and the impact of electric field in gate insulator on the ΔV th is also incorporated in this model. The result shows that the model is able to predict the ΔV th of IGZO TFT under a positive gate stress. The dependence of the ΔV th on the initial conditions is also analyzed in this paper." @default.
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- W2048885918 date "2014-06-01" @default.
- W2048885918 modified "2023-09-24" @default.
- W2048885918 title "A gate-stress-induced ΔV<inf>th</inf> model reflecting impact of electric field in IGZO thin film transistors" @default.
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- W2048885918 doi "https://doi.org/10.1109/edssc.2014.7061105" @default.
- W2048885918 hasPublicationYear "2014" @default.
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