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- W204889477 abstract "Attempts to explain the nature of the 1/f noise in AlGaN/GaN HFETs have involved three different mechanisms: occupancy fluctuations of the tail states near the band edges, fluctuations in the space charge regions surrounding dislocations, and electron tunneling from the 2D gas into adjacent GaN or AlGaN layers. Our experimental data favor the third mechanism. Three main arguments support this tunneling mechanism: (i) the observed temperature dependence of noise in the doped channel of AlGaN/GaN HFETs, which is explained by the tunneling model, (ii) a very weak temperature dependence of the 1/f noise in the temperature interval from 8 K to 300 K, (iii) the concentration dependence of the Hooge parameter typical for noise caused by the electron tunneling.." @default.
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- W204889477 date "2006-02-20" @default.
- W204889477 modified "2023-10-18" @default.
- W204889477 title "Tunneling Effects and Low Frequency Noise of GaN/GaAlN HFETs" @default.
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- W204889477 doi "https://doi.org/10.1007/1-4020-2170-4_19" @default.
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