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- W2048931265 abstract "Anodic bonding of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 °C to 450 °C. The composition of the deposited glass is enriched in sodium as compared to the target material. The roughness of the as-deposited films was below 5 run and was found to be unchanged by annealing at 500 °C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 °C. Annealing of silicon/glass structures in air around 340 °C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 °C and is above 80% for bonding temperatures higher than 225 °C. Pull testing revealed maximum bond strengths larger than 50 N/mm2 and an average bond strength around 25 N/mm2 for bonding temperatures above 300 °C. Structures bonded at temperatures lower than 300 °C show a near-linear decrease of the bond strength from 25 N/mm2 to 0 N/mm2 at 200 °C. A weak dependence on feature size was observed. For bonding temperatures higher than 300 °C fracture occurs randomly in the bulk of the silicon, whereas for bonding temperatures lower than 300 °C fracture always occurs at the bonding interface. Fracture of the glass itself was not observed." @default.
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- W2048931265 date "1998-10-01" @default.
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- W2048931265 title "Silicon-to-silicon wafer bonding using evaporated glass" @default.
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- W2048931265 doi "https://doi.org/10.1016/s0924-4247(98)00130-7" @default.
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