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• W2048956007 abstract "When a growth interruption is applied to the top interface of a nominally 3 monolayers (ML) thick InAs quantum well (QW), grown on an InP substrate, the InAs layer relaxes by formation of three-dimensional (3D) islands. The emission from the QW is split into at least 8 peaks. Each peak corresponds to an integral number of MLs of InAs. Using cathodoluminescence imaging and photoluminescence excitation spectroscopy, we demonstrate that the emission originates in 3D islands with a lateral extension of less than 1 μm. Furthermore, most of the 3D islands are completely isolated, separated by InP, even though there are 3D islands of different thicknesses that are connected. A conclusion from our investigation is that the whole InAs layer, rather than just the top ML, is involved in the 3D island formation." @default.
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• W2048956007 date "1995-01-01" @default.
• W2048956007 modified "2023-10-17" @default.
• W2048956007 title "Cathodoluminescence investigations of three-dimensional island formation in quantum wells" @default.
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• W2048956007 doi "https://doi.org/10.1016/0022-0248(94)00639-3" @default.
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