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• W2048978560 startingPage "L507" @default.
• W2048978560 abstract "Ion channeling and X-ray photoelectron spectroscopy (XPS) measurements were performed for characterization of the early stage of diamond nucleation on Si substrates. The diamond nucleation was induced by CH 4 /H 2 microwave-enhanced plasma with negative dc bias. Areal densities of C atoms N C (atoms/cm 2 ) and displaced Si atoms N Si (atoms/cm 2 ) near the surface were determined by ion channeling. At bias voltages V b of ≤80 V, N Si is approximately constant and at V b ≥80 V, N Si increases monotonously with V b , while N C increases monotonously with V b in the entire range of bias voltage. XPS measurements revealed that an increase in V b enhances a reaction between C and Si atoms. The results are discussed in terms of reactions on the substrate and in the plasma." @default.
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• W2048978560 date "1997-04-01" @default.
• W2048978560 modified "2023-10-08" @default.
• W2048978560 title "Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma" @default.
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• W2048978560 doi "https://doi.org/10.1143/jjap.36.l507" @default.
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