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• W2048979478 abstract "Dielectric and DC electrical properties of antiferroelectric lead zirconate and La-doped lead zirconate thin films deposited using a pulsed excimer-laser ablation technique were studied in detail. Increased La dopant concentration in pure lead zirconate thin films reduced the dielectric maximum and Curie temperature. At 9 mol.% of La in pure lead zirconate, the dielectric transition temperature reduced to room temperature. A gradual change from antiferroelectric to paraelectric through ferroelectric phases was observed with the addition of La to pure lead zirconate. The DC electrical properties of pure lead zirconate and the effect of donor addition on leakage current properties were studied. Correlation between the macroscopic changes observed in the charge transport mechanisms, microscopic defect chemistry and charge-carrier trapping phenomenon was examined in detail." @default.
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• W2048979478 date "2003-01-01" @default.
• W2048979478 modified "2023-09-26" @default.
• W2048979478 title "Study of La-modified antiferroelectric PbZrO3 thin films" @default.
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• W2048979478 doi "https://doi.org/10.1016/s0040-6090(02)00996-3" @default.
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