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• W2049006357 abstract "Raman scattering and x-ray photoelectron spectroscopy are used to study the damage induced by low energy Ar+ milling on InAs(100) surfaces. Evidence for etch-induced lattice damage is obtained even under the mildest conditions employed. Etching at 75 V creates an In-rich surface and reduces the intensity of scattering from the unscreened longitudinal optic (LO) phonon in the near-surface region. Etching at higher voltages creates damage states that increase the carrier concentration at depths at least as large as the Raman probe depth (∼100 Å). Postetch annealing at 500 °C in ultrahigh vacuum restores the LO phonon mode to its original intensity, the carrier concentration to original levels, and a stoichiometric (In:As=1:1) surface composition. Etch-induced lattice damage in the near-surface region, which is subsequently removed by annealing at optimal temperatures, is the only mechanism consistent with all the inelastic light scattering and composition results." @default.
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• W2049006357 date "2000-01-01" @default.
• W2049006357 modified "2023-10-18" @default.
• W2049006357 title "Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering" @default.
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• W2049006357 doi "https://doi.org/10.1116/1.591166" @default.
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