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• W2049008539 abstract "Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta ≤ 250 °C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250 °C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10−20 cm2 V−1 s−1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220 °C still exhibit electron mobilities of >0.2 cm2 V−1 s−1, which is encouraging for processing on plastic substrates." @default.
• W2049008539 created "2016-06-24" @default.
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• W2049008539 date "2009-07-15" @default.
• W2049008539 modified "2023-10-11" @default.
• W2049008539 title "Low-Temperature Solution-Processed Amorphous Indium Tin Oxide Field-Effect Transistors" @default.
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• W2049008539 doi "https://doi.org/10.1021/ja903886r" @default.
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