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- W2049033768 abstract "We report that the lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin films by pulsed laser deposition. The single-crystal substrates of MgO and BaF2 are designed to match the lattice of low-temperature α-GeTe phase and high-temperature β-GeTe phase, respectively. The structures of deposited GeTe films show lattice-match dependence rather than temperature dependence. Raman analysis indicates that the α-GeTe to β-GeTe ferroelectric phase transition accompanies an increase of local six-coordinated Ge atoms, which is analogous to the phase transition from amorphous to crystalline for memory application." @default.
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- W2049033768 date "2014-10-01" @default.
- W2049033768 modified "2023-10-17" @default.
- W2049033768 title "Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film" @default.
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- W2049033768 doi "https://doi.org/10.1016/j.tsf.2014.08.006" @default.
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