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- W2049062847 abstract "The authors combine nanostenciling and pulsed laser deposition to pattern germanium (Ge) nanostructures into desired architectures. They have analyzed the evolution of the Ge morphology with coverage. Following the formation of a wetting layer within each area defined by the stencil’s apertures, Ge growth becomes three dimensional and the size and number of Ge nanocrystals evolve with coverage. Micro-Raman spectroscopy shows that the deposits are crystalline and epitaxial. This approach is promising for the parallel patterning of semiconductor nanostructures for optoelectronic applications." @default.
- W2049062847 created "2016-06-24" @default.
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- W2049062847 date "2007-09-10" @default.
- W2049062847 modified "2023-10-16" @default.
- W2049062847 title "Site-controlled growth of Ge nanostructures on Si(100) via pulsed laser deposition nanostenciling" @default.
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- W2049062847 doi "https://doi.org/10.1063/1.2783473" @default.
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