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- W2049091567 endingPage "1695" @default.
- W2049091567 startingPage "1691" @default.
- W2049091567 abstract "The synthesis of thin diamond films using various chemical vapor deposition methods has received significant attention in recent years due to the: unique characteristic of diamond, which make it an attractive candidate for a wide range of applications. In order to grow diamond epitaxially, the proper control of diamond nucleation on mirror-polished Si is essential. Adding the negative bias voltage to the substrate is the most popular method. This paper has proposed a new method to greatly enhance the nuclear density. Under very low pressure (1 torr), the high-density nucleation of diamond is achieved on mirror-polished silicon in a hot-filament chemical vapor deposition (HFCVD). Scanning electron microscopy has demonstrated that the nuclear density can be as high as 10(10)-10(11) cm(-2). Raman spectra of the sample have shown a dominant diamond characteristic peak at 1332 cm(-1) The pressure effect has been discussed in detail and it has been shown that the very low pressure is a very effective means to nucleate and grow diamond films on mirror-polished silicon. Extraordinary pure hydrogen (purity = 99.9999%) was used as the source. Compared with the highly pure hydrogen (purity = 99.99%), we found that the density of nucleation was greatly increased. The residual oxygen in the hydrogen displayed a very obvious negative effect on the nucleation of diamond, although it can accelerate the growth of diamond. Based on these results, it was suggested that the enhanced nucleation at very low pressure should be attributed to an increased mean free path, which induced a high density of atomic hydrogen and hydrocarbon radicals near the silicon surface. Atomic hydrogen can effectively etch the oxide layer on the surface of silicon and so greatly enhance the nucleation density. (C) 2000 Published by Elsevier Science S.A. All rights reserved." @default.
- W2049091567 created "2016-06-24" @default.
- W2049091567 creator A5015534012 @default.
- W2049091567 creator A5033145523 @default.
- W2049091567 creator A5040331939 @default.
- W2049091567 creator A5052775691 @default.
- W2049091567 creator A5056726648 @default.
- W2049091567 creator A5078300149 @default.
- W2049091567 creator A5080348844 @default.
- W2049091567 date "2000-09-01" @default.
- W2049091567 modified "2023-09-25" @default.
- W2049091567 title "Diamond nucleation and growth under very low-pressure conditions" @default.
- W2049091567 cites W1968406755 @default.
- W2049091567 cites W1989131596 @default.
- W2049091567 cites W2019172822 @default.
- W2049091567 cites W2033935931 @default.
- W2049091567 cites W2060360940 @default.
- W2049091567 doi "https://doi.org/10.1016/s0925-9635(00)00301-0" @default.
- W2049091567 hasPublicationYear "2000" @default.
- W2049091567 type Work @default.
- W2049091567 sameAs 2049091567 @default.
- W2049091567 citedByCount "17" @default.
- W2049091567 countsByYear W20490915672012 @default.
- W2049091567 countsByYear W20490915672014 @default.
- W2049091567 countsByYear W20490915672017 @default.
- W2049091567 countsByYear W20490915672018 @default.
- W2049091567 countsByYear W20490915672023 @default.
- W2049091567 crossrefType "journal-article" @default.
- W2049091567 hasAuthorship W2049091567A5015534012 @default.
- W2049091567 hasAuthorship W2049091567A5033145523 @default.
- W2049091567 hasAuthorship W2049091567A5040331939 @default.
- W2049091567 hasAuthorship W2049091567A5052775691 @default.
- W2049091567 hasAuthorship W2049091567A5056726648 @default.
- W2049091567 hasAuthorship W2049091567A5078300149 @default.
- W2049091567 hasAuthorship W2049091567A5080348844 @default.
- W2049091567 hasConcept C121332964 @default.
- W2049091567 hasConcept C159985019 @default.
- W2049091567 hasConcept C171250308 @default.
- W2049091567 hasConcept C185592680 @default.
- W2049091567 hasConcept C192562407 @default.
- W2049091567 hasConcept C199289684 @default.
- W2049091567 hasConcept C2776921476 @default.
- W2049091567 hasConcept C61048295 @default.
- W2049091567 hasConcept C97355855 @default.
- W2049091567 hasConceptScore W2049091567C121332964 @default.
- W2049091567 hasConceptScore W2049091567C159985019 @default.
- W2049091567 hasConceptScore W2049091567C171250308 @default.
- W2049091567 hasConceptScore W2049091567C185592680 @default.
- W2049091567 hasConceptScore W2049091567C192562407 @default.
- W2049091567 hasConceptScore W2049091567C199289684 @default.
- W2049091567 hasConceptScore W2049091567C2776921476 @default.
- W2049091567 hasConceptScore W2049091567C61048295 @default.
- W2049091567 hasConceptScore W2049091567C97355855 @default.
- W2049091567 hasIssue "9-10" @default.
- W2049091567 hasLocation W20490915671 @default.
- W2049091567 hasOpenAccess W2049091567 @default.
- W2049091567 hasPrimaryLocation W20490915671 @default.
- W2049091567 hasRelatedWork W2082293200 @default.
- W2049091567 hasRelatedWork W2137307547 @default.
- W2049091567 hasRelatedWork W2358574126 @default.
- W2049091567 hasRelatedWork W2371413910 @default.
- W2049091567 hasRelatedWork W2380293314 @default.
- W2049091567 hasRelatedWork W2899084033 @default.
- W2049091567 hasRelatedWork W2943188944 @default.
- W2049091567 hasRelatedWork W3008690834 @default.
- W2049091567 hasRelatedWork W3082440218 @default.
- W2049091567 hasRelatedWork W4285802202 @default.
- W2049091567 hasVolume "9" @default.
- W2049091567 isParatext "false" @default.
- W2049091567 isRetracted "false" @default.
- W2049091567 magId "2049091567" @default.
- W2049091567 workType "article" @default.