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• W2049204584 abstract "Amorphous dielectric gallium phosphate thin films of various chemical compositions were deposited on silicon substrates by the `pyrosol' process. This paper reports the results of a structural study of these deposits before and after thermal annealing. Oxygen K-edge X-ray Absorption Near Edge Structures (XANES) measurements and oxygen 1s (O 1s) core-level X-ray Photoelectron Spectroscopy (XPS) data collection were carried out in order to probe the oxygen surroundings and chemical states. In P-rich thin films, the O atoms are dicoordinated, with the coexistence of Ga–O–P and P–O–P bridges. In Ga-enriched deposits, the oxygen atoms are mainly dicoordinated to gallium atoms. The annealed P-rich films are composed of dicoordinated oxygen atoms forming only Ga–O–P linkages, while in the annealed Ga-rich deposits, the O atoms present a mixed surroundings constituted of di, tri and tetracoordinated oxygen atoms." @default.
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• W2049204584 date "1998-06-01" @default.
• W2049204584 modified "2023-10-04" @default.
• W2049204584 title "Gallium phosphate thin solid films: structural and chemical determination of the oxygen surroundings by XANES and XPS" @default.
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• W2049204584 doi "https://doi.org/10.1016/s0040-6090(97)00961-9" @default.
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