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- W2049214027 abstract "The transport and recombination of minority carriers in heavily doped emitters plays a crucial role in the performance of silicon bipolar transistors and solar cells. In the past, only order-of-magnitude prediction of the value of the current injected into a heavily doped emitter was possible. The limitations to a more accurate modelling stemmed from: (1) the incomplete understanding of the physics of minority carriers in heavily doped semiconductors; (2) the lack of precise measurements of the relevant material parameters; (3) the difficulties encountered with the modelling of transport and recombination in non-homogeneously doped regions, and (4) problems with the characterization of “real” emitters of bipolar devices. This paper reviews recent experimental and theoretical efforts that addressed some of these issues, with the goal of being able to achieve accurate modelling of the current injected into an arbitrary heavily doped region in a silicon device." @default.
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- W2049214027 date "1987-11-01" @default.
- W2049214027 modified "2023-10-16" @default.
- W2049214027 title "Modelling of minority-carrier transport in heavily doped silicon emitters" @default.
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- W2049214027 doi "https://doi.org/10.1016/0038-1101(87)90077-3" @default.
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