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- W2049333896 abstract "The pH sensing characterizations of silicon nitride (Si <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> ) thin film, and Si <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> -based ISFET sensor were discussed in this paper. The Si <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> thin film was fabricated with to form silicon/silicon dioxide/silicon nitride (Si/SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> /Si <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> ) structure while Si <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> -based ISFET was fabricated and packaged as a pH sensor. Both thin film and ISFET packaged device have low pressure chemical vapor deposited silicon nitride as sensing layer. Source measure unit (SMU), the semiconductor device analyzer model Agilent B1500A and a custom made test jig was used to investigate the electrical properties for both Si <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> thin film and Si <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> -based ISFET sensor. The measurements were carrying out in three different buffer solutions with various pH levels of 4, 7 and 10 at room temperature. The pH sensitivity of thin film and ISFET packaged device with silicon nitride were 66.9 mV/pH and 53.6 mV/pH respectively. Both have shown good linearity in chosen pH range." @default.
- W2049333896 created "2016-06-24" @default.
- W2049333896 creator A5003011351 @default.
- W2049333896 creator A5009733964 @default.
- W2049333896 creator A5042916574 @default.
- W2049333896 creator A5048401231 @default.
- W2049333896 creator A5066033325 @default.
- W2049333896 creator A5071912305 @default.
- W2049333896 date "2013-08-01" @default.
- W2049333896 modified "2023-10-16" @default.
- W2049333896 title "pH sensing characteristics of silicon nitride thin film and silicon nitride-based ISFET sensor" @default.
- W2049333896 cites W1968951780 @default.
- W2049333896 cites W1975437434 @default.
- W2049333896 cites W2011917237 @default.
- W2049333896 cites W2026176908 @default.
- W2049333896 cites W2032168109 @default.
- W2049333896 cites W2035157284 @default.
- W2049333896 cites W2055709141 @default.
- W2049333896 cites W2064459599 @default.
- W2049333896 cites W2077149778 @default.
- W2049333896 cites W2106018048 @default.
- W2049333896 cites W2118527123 @default.
- W2049333896 cites W2119399232 @default.
- W2049333896 cites W2151139833 @default.
- W2049333896 doi "https://doi.org/10.1109/icsgrc.2013.6653290" @default.
- W2049333896 hasPublicationYear "2013" @default.
- W2049333896 type Work @default.
- W2049333896 sameAs 2049333896 @default.
- W2049333896 citedByCount "2" @default.
- W2049333896 countsByYear W20493338962014 @default.
- W2049333896 countsByYear W20493338962015 @default.
- W2049333896 crossrefType "proceedings-article" @default.
- W2049333896 hasAuthorship W2049333896A5003011351 @default.
- W2049333896 hasAuthorship W2049333896A5009733964 @default.
- W2049333896 hasAuthorship W2049333896A5042916574 @default.
- W2049333896 hasAuthorship W2049333896A5048401231 @default.
- W2049333896 hasAuthorship W2049333896A5066033325 @default.
- W2049333896 hasAuthorship W2049333896A5071912305 @default.
- W2049333896 hasConcept C192562407 @default.
- W2049333896 hasConcept C2777431650 @default.
- W2049333896 hasConcept C49040817 @default.
- W2049333896 hasConcept C544956773 @default.
- W2049333896 hasConceptScore W2049333896C192562407 @default.
- W2049333896 hasConceptScore W2049333896C2777431650 @default.
- W2049333896 hasConceptScore W2049333896C49040817 @default.
- W2049333896 hasConceptScore W2049333896C544956773 @default.
- W2049333896 hasLocation W20493338961 @default.
- W2049333896 hasOpenAccess W2049333896 @default.
- W2049333896 hasPrimaryLocation W20493338961 @default.
- W2049333896 hasRelatedWork W1600386292 @default.
- W2049333896 hasRelatedWork W2002070225 @default.
- W2049333896 hasRelatedWork W2002125179 @default.
- W2049333896 hasRelatedWork W2081069970 @default.
- W2049333896 hasRelatedWork W2150844846 @default.
- W2049333896 hasRelatedWork W2312552982 @default.
- W2049333896 hasRelatedWork W2591945551 @default.
- W2049333896 hasRelatedWork W3004187972 @default.
- W2049333896 hasRelatedWork W3023598335 @default.
- W2049333896 hasRelatedWork W4252217798 @default.
- W2049333896 isParatext "false" @default.
- W2049333896 isRetracted "false" @default.
- W2049333896 magId "2049333896" @default.
- W2049333896 workType "article" @default.