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• W2049381570 abstract "Resistive Random Access Memory (ReRAM) has several advantages over current NAND Flash technology, highlighting orders of magnitude lower access latency and higher endurance. Recently proposed 3D vertical cross-point ReRAM (3D-VRAM) architecture is an encouraging development in ReRAM's evolution as a cost-competitive solution, and thus attracts a lot of attention in both industry and academia. In this work, an array-level model to estimate the read/write energy and characterize the vertical access transistor is developed. We use the model to study a range of design trade-offs by tuning the cell-level characteristics and the read/write schemes. The design space exploration addresses several critical issues that are either unique to 3D-VRAM or have substantially different concerns from the 2D cross-point array design. It provides insights on the design optimizations of the array density and access energy, and several important conclusions have been reached. Then we propose multi-directional write driver to mitigate the writer circuitry overhead, and use remote sensing scheme to take full advantage of limited on-die sensing resources. The benefits of these optimizations are evaluated and validated in our macro-architecture model. With trace-based simulations, system-level comparisons between 3D-VRAM and a wide spectrum of memories are performed in mixed aspects of performance, cost, and energy. The results show that our optimized 3D-VRAM design are better than other contenders for storage memory in both performance and energy." @default.
• W2049381570 created "2016-06-24" @default.
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• W2049381570 date "2014-11-03" @default.
• W2049381570 modified "2023-10-15" @default.
• W2049381570 title "Architecting 3D vertical resistive memory for next-generation storage systems" @default.
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• W2049381570 doi "https://doi.org/10.5555/2691365.2691376" @default.
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