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- W2049392351 abstract "Abstract Bismuth layer-structured ferroelectric thin films consisting of a stacking of pseudoperovskite and bismuth oxide blocks along the c -axis were epitaxially grown on single-crystal substrates by metalorganic chemical vapor deposition (MOCVD), and a selective reaction of the bismuth oxide layer with HCl was demonstrated. Epitaxial films with contrasting crystal orientations were used for the acid treatment in order to probe chemical anisotropy. For a / b -axis-oriented SrBi 2 Ta 2 O 9 , Bi 4 Ti 3 O 12 , and SrBi 4 Ti 4 O 15 films with sequential stacking of the two vertical blocks, notable structural selectivity of the reaction was observed only for SrBi 2 Ta 2 O 9 . For this film, the pseudoperovskite block remained and the bismuth oxide block was removed, while both blocks of Bi 4 Ti 3 O 12 and SrBi 4 Ti 4 O 15 dissolved into the acid. In addition to the bismuth, the other cations in the pseudoperovskite blocks, strontium and titanium, also decreased for Bi 4 Ti 3 O 12 and SrBi 4 Ti 4 O 15 . The selective reaction observed for a / b -axis-oriented SrBi 2 Ta 2 O 9 , however, was not observed for c -axis-oriented SrBi 2 Ta 2 O 9 films in which the pseudoperovskite and bismuth oxide blocks were stacked horizontally. The results clearly show that SrBi 2 Ta 2 O 9 has sub-nano-order structural selectivity and chemical anisotropy in the unit cell in the reaction with HCl." @default.
- W2049392351 created "2016-06-24" @default.
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- W2049392351 date "2005-01-01" @default.
- W2049392351 modified "2023-10-18" @default.
- W2049392351 title "Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films" @default.
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- W2049392351 doi "https://doi.org/10.1016/j.jssc.2004.10.019" @default.
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