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• W2049457601 abstract "Low-frequency (1/f) noise is studied in N-channel furnace solid phase crystallized (FSPC) and in laser solid phase crystallized (LSPC) polysilicon thin film transistors (TFTs) biased from weak to strong inversion. Noise analysis is supported by the theory of charge carrier trapping/detrapping at the interface tunneling into gate oxide traps. The distribution of interface trap states (NT) is deduced from the number of carriers trapped into the oxide. Noise measurements for devices biased from weak to moderate inversion allow the determination of the distribution of deep level trap states associated with dangling bond-type defects (NTdb), whereas measurements from moderate to strong inversion give the distribution of shallow level trap states (NTts) associated with strained bond defects. The noise analysis clearly shows that the slope of both exponential distributions equals to the reverse of the Meyer Neldel energy EMN (0.035 and 0.055 eV for FSPC and LSPC TFTs, respectively). For LSPC devices the resulting distribution of interface states (NT=NTdb+NTts) is one decade lower and it is attributed to the effects of the laser annealing on the active layer crystal quality." @default.
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• W2049457601 date "2009-05-15" @default.
• W2049457601 modified "2023-10-06" @default.
• W2049457601 title "Improvement in the determination by 1/f noise measurements of the interface state distribution in polysilicon thin film transistors in relation with the compensation law of Meyer Neldel" @default.
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• W2049457601 doi "https://doi.org/10.1063/1.3126706" @default.
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