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- W2049466985 abstract "The microroughness of the SiO2 interfaces in VLSIMOS devices is studied considering a statistical distribution of local oxide thicknesses at an appropriated superficial scale. The influence of this microroughness on the Fowler-Nordheim (F-N) conduction is analyzed in detail. The current in the F-N regime is found to flow concentrated in small regions of the total area of the rough oxide layer. The F-N plot is found to deviate from linearity in the low-electric-field region. Quantum oscillations in the F-N plot of structures containing very thin and rough oxides are theoretically explained after having reinterpreted the SiOx interfacial transition layer in terms of the microroughness and assuming a chemically abrupt local interface. La microrugosité des interfaces du SiO2 dans structures MOSVLSI a été étudiée en considérant une distribution statistique appropriée. L'influence de cette microrugosité sur la conduction Fowler-Nordheim (F-N) a été profondement analysée. Le courant F-N flue concentré en petites portions de la surface totale de l'oxyde. Le plot F-N présente une déviation de la lineaireté à la région de baux champs électriques. Les oscillations quantiques du plot F-N en structures formées avec une couche très mince et rugose de SiO2 ont été expliquées théoriquement après d'avoir reinterpreté la couche de transition d'interface SiOx en termes de la microrugosité et en assumant que l'interface chimique est locallement abrupte." @default.
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- W2049466985 date "1988-10-16" @default.
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- W2049466985 title "On the SiSiO2 interface roughness in VLSIMOS structures" @default.
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