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- W2049649163 abstract "Threading dislocations that are of a type were observed to form locally in InGaN layers and wells containing 7%–15% indium. Direct correlations between a type dislocations and stacking faults in InGaN layers and wells were observed. The formation of these dislocations is attributed to the dissociation of Shockley partials bounding the stacking faults." @default.
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- W2049649163 date "2011-10-01" @default.
- W2049649163 modified "2023-09-24" @default.
- W2049649163 title "Origin of predominantly <b>a</b> type dislocations in InGaN layers and wells grown on (0001) GaN" @default.
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- W2049649163 doi "https://doi.org/10.1063/1.3643001" @default.
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