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- W2049683346 abstract "The influence of ion implantation on diamond and cubic boron nitride is discussed. It is shown that high energy ion implantation (0.5 MeV/nucleon and more) is a promising ion beam method for modification causing new effects in the superhard semiconductors by means of: - formation of multilayer impurity-defect structures which allow one to make three dimensional doped structures; - stimulation of impurity and defect diffusion along the tracks of the high energy ions. Using this effect the doping of superhard semiconductors at low temperature (about 1000°C) diffusion at a depth of several microns is possible; - formation of high pressure (several GPa) in local regions." @default.
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- W2049683346 date "1991-11-01" @default.
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- W2049683346 title "High energy ion implantation into diamond and cubic boron nitride" @default.
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- W2049683346 doi "https://doi.org/10.1016/0168-583x(91)95933-5" @default.
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