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- W2049817140 abstract "A simple and low-cost structure of voltage-tunable dual-band near-infrared photodetector (PD) has been proposed, in which the PDs were developed by using Si0.8Ge0.2/Si metal–semiconductor–metal (MSM) heterostructure. The Si0.8Ge0.2/Si layers were deposited by ultrahigh-vacuum chemical vapor deposition system and a transparent layer of indium–tin oxide (ITO) was used as a metal layer to enhance the entrance of photons. In this study, we found that only one band was detected with a peak wavelength located at 950 nm at zero applied bias. When bias was increased to 1 V, in contrast a dual-band was achieved, where two peak wavelengths were centered at 950- and 1150-nm. It is suggested that the two bands are the absorption of top-Si and bottom-Si0.8Ge0.2 layers, respectively. The spectra of Si bulk and Si0.8Ge0.2 layer were also measured to verify our results and relating mechanisms are explained here." @default.
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- W2049817140 date "2008-11-01" @default.
- W2049817140 modified "2023-09-23" @default.
- W2049817140 title "Voltage-tunable dual-band infrared photodetectors with Si/SiGe metal–semiconductor–metal heterostructure" @default.
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- W2049817140 doi "https://doi.org/10.1016/j.mee.2008.07.002" @default.
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