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• W2049880526 abstract "X-ray photoemission (ZrMζ, hν=151.4 eV, and MgKα, hν=1253.6 eV) and electron energy loss spectroscopies, low-energy electron diffraction and work-function measurement have been used to study the initial adsorption of oxygen on cubic β-SiC(001) at room temperature. Three different SiC surfaces have been considered—Si-rich [two-domain (3×1) low-energy electron diffraction pattern], stoichiometric [two-domain (2×1)], and Si-deficient [c(2×2)]. Similar data have also been obtained for a Si(001)-(2×1) surface. For SiC the initial rates of O uptake are in the order (2×1)&gt;(3×1)&gt;c(2×2), and the rates for all three are much less than that for Si (2×1). A model for the initial adsorption of O on SiC is proposed in which the rates for the different SiC surfaces reflect the relative ease of formation of Si-O-Si bridges between surface Si atoms while the greater rate for Si versus SiC results from the difficulty in inserting O into SiC backbonds." @default.
• W2049880526 created "2016-06-24" @default.
• W2049880526 creator A5084431581 @default.
• W2049880526 date "1989-12-15" @default.
• W2049880526 modified "2023-09-23" @default.
• W2049880526 title "Photoemission study of oxygen adsorption on (001) silicon carbide surfaces" @default.
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• W2049880526 doi "https://doi.org/10.1063/1.343589" @default.
• W2049880526 hasPublicationYear "1989" @default.
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