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• W2049896051 abstract "SnO thin films were fabricated by electron beam evaporation on (100) Si and c- and r-plane Al2O3 substrates. The films grown at 25 °C are nanocrystalline, while the films grown at 600 °C are epitaxial on r-plane Al2O3 and (001) textured on Si and c-plane Al2O3. The SnO films have an optical band gap of 2.82–2.97 eV and p-type conductivity, according to Hall measurements, with resistivities of 0.5–110 Ω cm, hole concentrations of 1017–1019 cm−3, and Hall mobilities of 0.1–2.6 cm2/Vs. The p-type conductivity, which appears to correlate with VSn, can be enhanced via Y- and Sb-doping. Defect complexes of SbSn−2VSn are suggested to be the acceptors in Sb-(or Y-) doped SnO films." @default.
• W2049896051 created "2016-06-24" @default.
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• W2049896051 date "2010-01-25" @default.
• W2049896051 modified "2023-10-18" @default.
• W2049896051 title "Microstructure, optical, and electrical properties of p-type SnO thin films" @default.
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• W2049896051 doi "https://doi.org/10.1063/1.3277153" @default.
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