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- W2049916691 abstract "In this paper, we report the study of a n-type InP-SiO2 Metal-Insulator-Semiconductor structure by means of Deep Level Transient Spectroscopy and two complementary techniques : Capacitance versus Voltage and Conductance versus Frequency measurements. We have observed two bulk traps probably related to impurities in the InP crystal. Majority carrier interface states have been studied : the three methods bring similar density profiles showing a minimum value about 1012 eV-1 cm-2 in the energy range 0.4–0.7eV below the conduction band edge. Moreover, we have detected a “missing Phosphorus” interface level at 0.3 eV below the conduction band with a density about 4 x 1010 cm-2." @default.
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- W2049916691 date "1987-10-01" @default.
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- W2049916691 title "InP-SiO2 metal-insulator-semiconductor structure parameters investigated with DLTS and other capacitance techniques" @default.
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- W2049916691 doi "https://doi.org/10.1016/0038-1098(87)90748-4" @default.
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