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• W2050147790 abstract "Processes for making nanoporous SiO2 layers on Si via the irradiation of thermally oxidized silicon wafers with fast ions followed by chemical treatment in a solution or vapor of hydrofluoric acid are presented. It is shown that the density, shape, diameter, and length-to-diameter ratio of channels etched in silicon dioxide can be controlled by varying the regimes of fast ion irradiation or chemical treatment of SiO2/Si structures. Track parameters calculated using the thermal spike model are compared with the chemical etching data." @default.
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• W2050147790 date "2012-05-01" @default.
• W2050147790 modified "2023-10-10" @default.
• W2050147790 title "A new nanoporous material based on amorphous silicon dioxide" @default.
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• W2050147790 doi "https://doi.org/10.3103/s1062873812050267" @default.
• W2050147790 hasPublicationYear "2012" @default.
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