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- W2050209397 abstract "Boron-doped hydrogenated silicon films were deposited by the rf magnetron sputtering techique using a poly-Si target and a sputtering gas mixture of argon, hydrogen and 1% diborane in argon. The effects of rf power density and substrate temperature on the properties of thin and ultrathin films were studied. The films were characterised by conductivity, Hall effect, optical transmission measurements, X-ray diffractometry, transmission electron microscopy and infrared vibrational spectroscopy. With suitable parametric optimisation, maximum conductivity values of 20 S cm -1 and 0.3 S cm -1 were realised for thin and ultrathin films, respectively. Highly conducting films ( ≥5 S cm -1 ) showed (220) orientation of silicon parallel to the substrate. Low power densities ( ≈0.9 W/cm 2 ) resulted in a homogeneous growth and with increase in power density, evidence of boron crystal segregation was obtained. Conditions where conducting ultrathin films could be deposited on transparent conducting oxide without apparent degradation were determined." @default.
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- W2050209397 date "1994-01-01" @default.
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- W2050209397 title "Electronic and Structural Characterisation of Boron-Doped Hydrogenated Silicon Thin and Ultrathin Films Prepared by RF Magnetron Sputtering" @default.
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- W2050209397 doi "https://doi.org/10.1143/jjap.33.42" @default.
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