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• W2050371931 startingPage "4362" @default.
• W2050371931 abstract "Thick layers of Ga1−xAlxAs with uniform composition were grown by an isothermal liquid-phase epitaxial technique. Infrared reflectivity and Raman-scattering spectra were measured with the same samples. The clean ’’two mode’’ behavior was confirmed in the reststrahlen band region, and the infrared reflectivity spectra were analyzed by using a Kramers-Kronig dispersion relation and by curve fitting to two forms for the classical dielectric function, one an additive form and the other a factorized form. The experimental data are in good agreement with the calculated TO and LO frequencies, when the Chang-Mitra model has been modified with the assumption of a nonlinear dependence of the oscillator strengths on composition. In the Raman spectra, the disorder-activated LA mode near 200 cm−1, a mode near 250 cm−1, and a background-level change were observed and attributed to atomic disorder. In the infrared reflectivity measurements the major disorder-induced effect was the increase in the TO and LO damping constants." @default.
• W2050371931 created "2016-06-24" @default.
• W2050371931 creator A5020539066 @default.
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• W2050371931 date "1979-06-01" @default.
• W2050371931 modified "2023-10-09" @default.
• W2050371931 title "Infrared reflectivity spectra and Raman spectra of Ga1−<i>x</i>Al<i>x</i>As mixed crystals" @default.
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• W2050371931 doi "https://doi.org/10.1063/1.326422" @default.
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