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• W2050386483 abstract "The oxidation and the resulting changes in the dc resistivity of chemically deposited Ni–P films were studied. The oxidation was found to be a two-stage process. At temperatures below 550°K mainly oxygen diffusion along the grain boundaries takes place, while above this temperature a surface-oxide layer forms. The rates of these processes are similar to those for certain bulk metals. A model to explain the resistivity changes, containing two separate terms with different activation energies, is used to analyze the experimental results. The two terms correspond to the two stages of oxidation. The agreement between calculated and measured resistance values for near-ideal films is satisfactory. We suggest that the model may be applicable to other thin-metal films." @default.
• W2050386483 created "2016-06-24" @default.
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• W2050386483 date "1972-12-01" @default.
• W2050386483 modified "2023-09-25" @default.
• W2050386483 title "Effect of oxidation on the resistivity of Ni–P films" @default.
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• W2050386483 doi "https://doi.org/10.1063/1.1661055" @default.
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