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- W2050407897 abstract "The effect of H2 surface pretreatment on the density of interface traps in SiO2 films grown on the Si-face of 4H-SiC has been investigated. With respect to the more conventional oxide grown in nitrous oxide gas by rapid thermal processing but without any preannealing step, we find that the interface trap and fixed oxide charge densities have been reduced by, typically, one order of magnitude. The reasons for such improvement in the properties of the SiO2/SiC interface after preoxidation hydrogen annealing are discussed." @default.
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- W2050407897 date "2009-02-09" @default.
- W2050407897 modified "2023-10-09" @default.
- W2050407897 title "Benefit of H2 surface pretreatment for 4H-SiC oxynitridation using N2O and rapid thermal processing steps" @default.
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- W2050407897 doi "https://doi.org/10.1063/1.3077016" @default.
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