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• W2050441472 abstract "On the basis of the first-principles total-energy calculations within the density-functional theory, the surface formation energies and the charge density differences of AlN (0001) and (000−1) polar surfaces with an In-, Al-, or N-adlayer have been studied. The results show that In presents surfactant effect on AlN (0001) but does not behave as such on AlN (000−1), which is the same as the case of GaN. The surfactant effect of In is attributable to the much weaker In−Al bond than the Al−N bond on the Al-polar AlN surface and the bigger average diffusion coefficient for Al atoms on the Al-polar AlN surface with In-adlayer according to the calculated charge density differences and diffusion barriers, respectively." @default.
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• W2050441472 date "2009-05-18" @default.
• W2050441472 modified "2023-10-14" @default.
• W2050441472 title "Effect of In-Adlayer on AlN (0001) and (000−1) Polar Surfaces" @default.
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• W2050441472 doi "https://doi.org/10.1021/jp810953k" @default.
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