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- W2050494749 endingPage "01AE03" @default.
- W2050494749 startingPage "01AE03" @default.
- W2050494749 abstract "Silicon-on-insulator (SOI) wafers are important semiconductor substrates in high-performance devices. In accordance with device miniaturization requirements, ultrathin and highly uniform top silicon layers (SOI layers) are required. A novel method involving numerically controlled (NC) atmospheric-pressure plasma sacrificial oxidation using an electrode array system was developed for the effective fabrication of an ultrathin SOI layer with extremely high uniformity. Spatial resolution and oxidation properties are the key factors controlling ultraprecision machining. The controllability of plasma oxidation and the oxidation properties of the resulting experimental electrode array system were examined. The results demonstrated that the method improved the thickness uniformity of the SOI layer over one-sixth of the area of an 8-in. wafer area." @default.
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- W2050494749 date "2014-11-13" @default.
- W2050494749 modified "2023-09-27" @default.
- W2050494749 title "Numerically controlled atmospheric-pressure plasma sacrificial oxidation using electrode arrays for improving silicon-on-insulator layer uniformity" @default.
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- W2050494749 doi "https://doi.org/10.7567/jjap.54.01ae03" @default.
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