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• W2050555204 abstract "In this study, <TEX>$BaTiO_3$</TEX> thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the <TEX>$BaTiO_3$</TEX> thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from <TEX>$500-1000^{circ}C$</TEX>. XRD results showed that the highest crystal quality was obtained from the samples annealed at <TEX>$600-700^{circ}C$</TEX>. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to <TEX>$600^{circ}C$</TEX>; and 80 nm grains were obtained at <TEX>$700^{circ}C$</TEX>. The surface roughness of the <TEX>$BaTiO_3$</TEX> thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was <TEX>$700^{circ}C$</TEX>. XPS results demonstrated that the binding energy of each element of the thin-film-type <TEX>$BaTiO_3$</TEX> in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at <TEX>$1000^{circ}C$</TEX>. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to <TEX>$700^{circ}C$</TEX>. All of the results obtained in this study clearly demonstrate that an annealing temperature of <TEX>$700^{circ}C$</TEX> results in optimal structural properties of <TEX>$BaTiO_3$</TEX> thin films in terms of their crystal quality, surface roughness, and composition." @default.
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• W2050555204 date "2008-04-01" @default.
• W2050555204 modified "2023-09-26" @default.
• W2050555204 title "Relationship Between Annealing Temperature and Structural Properties of BaTiO₃Thin Films Grown on p-Si Substrates" @default.
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• W2050555204 doi "https://doi.org/10.3740/mrsk.2008.18.4.222" @default.
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