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- W2050584089 abstract "High radiance light-emitting diodes with optical waveguides have been fabricated by cleaving the epitaxial wafers composed of GaAs substrate/nAlxGa1-xAs/nAlyGa1-yAs/compensated AlzGa1-zAs/pAlxGa1-xAs/nGaAs (x>y>z≧0), and a very small hemisphere radiator (300 µm) was bonded to the emitting facet. In this configuration, a sufficient high radiance to serve as sources for multimode optical fiber transmission lines was obtained at a driving current of 300 mA (3.5 kA/cm2); the DC radiance as high as 1400 W/str.cm2 and the optical output of 0.6 mW within the aperture angle of 10 deg. have been obtained." @default.
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- W2050584089 date "1976-03-01" @default.
- W2050584089 modified "2023-09-26" @default.
- W2050584089 title "High Radiance Light-Emitting Diodes" @default.
- W2050584089 cites W2131863178 @default.
- W2050584089 doi "https://doi.org/10.1143/jjap.15.485" @default.
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