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- W2050652651 abstract "The (100)-oriented lanthanum hexaboride (LaB6) films, deposited on MgO substrate by e-beam evaporation technique, were oxidated at 400 °C, immersed in distilled water, and post-annealed at 650 °C in vacuum (3.6 Pa). The results obtained by X-ray diffraction, scanning electron microscope and reflection spectroscopy showed formation of La2O3/LaB6 structure with lanthanum oxide (La2O3) overlayer of cubic phase. The asymmetrical non-linear current–voltage and capacitance–voltage characteristics have been measured on Al/La2O3/LaB6/MgO stack at 1 kHz under bias voltage from − 10 to + 10 V and explained by space-charge-limited current; the dielectric constant of 11 for as-grown La2O3 is obtained." @default.
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- W2050652651 date "2014-08-01" @default.
- W2050652651 modified "2023-10-05" @default.
- W2050652651 title "Structural and electrical characteristics of lanthanum oxide formed on surface of LaB6 film by annealing" @default.
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- W2050652651 doi "https://doi.org/10.1016/j.tsf.2014.05.062" @default.
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