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• W2050672777 abstract "Preparation of N-doped ZnO thin films was attempted using various co-doping methods. A ZnO:Ga (Ga2O3 of 5 wt.%) target was ablated in NO gas by pulsed laser deposition (PLD). In addition, a nitrogen ion gun and an ECR nitrogen plasma source were used as post-N-doping treatment of undoped ZnO films. Optical emission from elemental Zn I, Ga I and O I, as well as from N2 molecules, was identified in the plasma plume. The structural, optical and electrical properties of these synthesized films were investigated. All films show n-type conduction, with resistivity in the range 10−3–10−2 Ω cm and carrier density from 1017 to 1020 cm−3." @default.
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• W2050672777 date "2003-07-01" @default.
• W2050672777 modified "2023-09-23" @default.
• W2050672777 title "Synthesis of p-type ZnO thin films using co-doping techniques based on KrF excimer laser deposition" @default.
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• W2050672777 doi "https://doi.org/10.1016/s0040-6090(03)00383-3" @default.
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