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- W2050702941 abstract "InGaAsP, adapted in its composition for a band gap equivalent to a wavelength of 1.3 μm and lattice matched to InP, is grown by liquid-phase epitaxy. Transmission and reflectance measurements in the vicinity of the band gap are made, from which the refractive index of both InP and the quaternary compound are derived. Also the optical absorption coefficient α of the quaternary compound is obtained. Above the band gap, α can be fitted to the model of direct band-to-band transitions, allowing the precise determination of the band-gap energy. Below the band gap, α follows an exponential dependence on photon energy. Using material parameters for the quaternary compound, the role of phonon-assisted transitions is discussed in this spectral range. InGaAsP, dessen Bandabstand über die Zusammensetzung als äquivalent zu 1,3 μm gewählt ist und das in seinem Gitter InP angepaßt ist, wird epitaktisch aus der flüssigen Phase gezogen. Aus Transmissions- und Reflexionsmessungen wird der Brechungsindex des InP und der quaternären Verbindung in der Nähe der Bandkante bestimmt. Ebenso wird der optische Absorptionskoeffizient α der quaternären Verbindung gewonnen. Oberhalb der Bandkante kann α durch direkte Band-Band-Übergänge beschrieben werden, wodurch eine genaue Bestimmung der Breite des verbotenen Bandes möglich ist. Unterhalb der Bandkante ist α exponentiell von der Photonenenergie abhängig. Für diesen Spektralbereich werden Übergänge unter Mitwirkung von Phononen diskutiert, wobei die Materialparameter der quaternären Legierung verwendet werden." @default.
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- W2050702941 date "1981-11-16" @default.
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- W2050702941 title "Near-band-gap absorption of InGaAsP at 1.3 μm wavelength" @default.
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- W2050702941 doi "https://doi.org/10.1002/pssa.2210680121" @default.
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