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- W2050744557 abstract "The switching characteristics of polysilicon n-π-n devices present an extended negative-resistance region and allow large current densities. A breakover threshold field of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> V/cm has been deduced. It is suggested that polysilicon devices should be explored for switching applications." @default.
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- W2050744557 date "1974-01-01" @default.
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- W2050744557 title "Breakover and negative resistance in polycrystalline silicon n-π-n DIAC's" @default.
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- W2050744557 doi "https://doi.org/10.1109/proc.1974.9632" @default.
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