Matches in SemOpenAlex for { <https://semopenalex.org/work/W2050769732> ?p ?o ?g. }
Showing items 1 to 76 of
76
with 100 items per page.
- W2050769732 abstract "Experimental results, related to a novel laser-assisted technique for deposition of III-V semiconductor thin-films, are presented. The method involves precursors in the form of I-III- V Zintl-phase materials. While such compounds exhibit a variety of useful properties, the presence of the group I element is a major concern--in terms of the desired final product it can be considered a major impurity that has to be removed. To address this situation, we employ a strategy, based on the difference in the ionization potentials for the constituent elements, that can be described in brief as (1) laser ablation of a I-III-V compound, (2) removal of the group I element by selective gas-phase laser ionization and extraction in an electric field, and (3) subsequent re-deposition of the III-V compound. For a particular I-III-V Zintl-phase compound, potassium indium antimonide, K<SUB>4</SUB>In<SUB>4</SUB>Sb<SUB>6</SUB>, time-of-flight mass spectra clearly demonstrate high yield selective gas phase ionization and removal of potassium from the ablation plume. Deposition conditions have been found for scaling of the above removal process macroscopically to thin film growth. The deposits have been studied by Auger electron spectroscopy and the results confirm significant depletion of potassium from thin films deposited via the proposed ablation/ionization removal technique. An assessment is made as to the viability of the process and implications for possible applications of this research as related to film growth are discussed." @default.
- W2050769732 created "2016-06-24" @default.
- W2050769732 creator A5044112328 @default.
- W2050769732 creator A5046513642 @default.
- W2050769732 creator A5050506531 @default.
- W2050769732 creator A5053565106 @default.
- W2050769732 date "1995-09-25" @default.
- W2050769732 modified "2023-09-23" @default.
- W2050769732 title "<title>III-V semiconductor thin films via laser ablation/ionization of I-III-V Zintl-phase materials</title>" @default.
- W2050769732 doi "https://doi.org/10.1117/12.221486" @default.
- W2050769732 hasPublicationYear "1995" @default.
- W2050769732 type Work @default.
- W2050769732 sameAs 2050769732 @default.
- W2050769732 citedByCount "1" @default.
- W2050769732 crossrefType "proceedings-article" @default.
- W2050769732 hasAuthorship W2050769732A5044112328 @default.
- W2050769732 hasAuthorship W2050769732A5046513642 @default.
- W2050769732 hasAuthorship W2050769732A5050506531 @default.
- W2050769732 hasAuthorship W2050769732A5053565106 @default.
- W2050769732 hasConcept C108225325 @default.
- W2050769732 hasConcept C113196181 @default.
- W2050769732 hasConcept C120665830 @default.
- W2050769732 hasConcept C121332964 @default.
- W2050769732 hasConcept C145148216 @default.
- W2050769732 hasConcept C171250308 @default.
- W2050769732 hasConcept C178790620 @default.
- W2050769732 hasConcept C185544564 @default.
- W2050769732 hasConcept C185592680 @default.
- W2050769732 hasConcept C19067145 @default.
- W2050769732 hasConcept C192562407 @default.
- W2050769732 hasConcept C198291218 @default.
- W2050769732 hasConcept C25442681 @default.
- W2050769732 hasConcept C2778133893 @default.
- W2050769732 hasConcept C2779188808 @default.
- W2050769732 hasConcept C37982897 @default.
- W2050769732 hasConcept C43617362 @default.
- W2050769732 hasConcept C49040817 @default.
- W2050769732 hasConcept C520434653 @default.
- W2050769732 hasConcept C71987851 @default.
- W2050769732 hasConceptScore W2050769732C108225325 @default.
- W2050769732 hasConceptScore W2050769732C113196181 @default.
- W2050769732 hasConceptScore W2050769732C120665830 @default.
- W2050769732 hasConceptScore W2050769732C121332964 @default.
- W2050769732 hasConceptScore W2050769732C145148216 @default.
- W2050769732 hasConceptScore W2050769732C171250308 @default.
- W2050769732 hasConceptScore W2050769732C178790620 @default.
- W2050769732 hasConceptScore W2050769732C185544564 @default.
- W2050769732 hasConceptScore W2050769732C185592680 @default.
- W2050769732 hasConceptScore W2050769732C19067145 @default.
- W2050769732 hasConceptScore W2050769732C192562407 @default.
- W2050769732 hasConceptScore W2050769732C198291218 @default.
- W2050769732 hasConceptScore W2050769732C25442681 @default.
- W2050769732 hasConceptScore W2050769732C2778133893 @default.
- W2050769732 hasConceptScore W2050769732C2779188808 @default.
- W2050769732 hasConceptScore W2050769732C37982897 @default.
- W2050769732 hasConceptScore W2050769732C43617362 @default.
- W2050769732 hasConceptScore W2050769732C49040817 @default.
- W2050769732 hasConceptScore W2050769732C520434653 @default.
- W2050769732 hasConceptScore W2050769732C71987851 @default.
- W2050769732 hasLocation W20507697321 @default.
- W2050769732 hasOpenAccess W2050769732 @default.
- W2050769732 hasPrimaryLocation W20507697321 @default.
- W2050769732 hasRelatedWork W1496719954 @default.
- W2050769732 hasRelatedWork W2013332392 @default.
- W2050769732 hasRelatedWork W2049182216 @default.
- W2050769732 hasRelatedWork W2049801110 @default.
- W2050769732 hasRelatedWork W2066015570 @default.
- W2050769732 hasRelatedWork W2076143582 @default.
- W2050769732 hasRelatedWork W2089938171 @default.
- W2050769732 hasRelatedWork W2091315332 @default.
- W2050769732 hasRelatedWork W2242237644 @default.
- W2050769732 hasRelatedWork W910373159 @default.
- W2050769732 isParatext "false" @default.
- W2050769732 isRetracted "false" @default.
- W2050769732 magId "2050769732" @default.
- W2050769732 workType "article" @default.