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• W2050871970 endingPage "1967" @default.
• W2050871970 startingPage "1964" @default.
• W2050871970 abstract "We have investigated electrical stress-induced charge carrier generation/trapping in a 4.2 nm thick (physical thickness Tphy) hafnium oxide (HfO2)/silicon dioxide (SiO2) dielectric stack in metal-oxide-semiconductor (MOS) capacitor structures with negative bias on the gate. It is found that electron trapping is suppressed in our devices having an equivalent oxide thickness (EOT) as low as 2.4 nm. Our measurement results indicate that proton-induced defect generation is the dominant mechanism of generation of bulk, border and interface traps during stress. In addition, we have shown that constant voltage stress (CVS) degrades the dielectric quality more than constant current stress (CCS)." @default.
• W2050871970 created "2016-06-24" @default.
• W2050871970 creator A5020260274 @default.
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• W2050871970 date "2007-09-01" @default.
• W2050871970 modified "2023-10-04" @default.
• W2050871970 title "Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack" @default.
• W2050871970 cites W1663845104 @default.
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• W2050871970 doi "https://doi.org/10.1016/j.mee.2007.04.084" @default.
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