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• W2050873145 abstract "Abstract This work presents the fabrication, characterization and modeling of inverted staggered a-SiGe:H TFTs with planarized gate electrode. Using this structure two different sequences of fabrication are presented, where spin-on glass and silicon nitride are used as passivation layer, respectively. The results show ambipolar and unipolar behavior in the a-SiGe:H TFTs depending on the fabrication sequence. Also, trap density and characteristic energies for the deep localized states in the a-SiGe:H film are obtained. Using these parameters the device modeling is presented." @default.
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• W2050873145 date "2014-09-01" @default.
• W2050873145 modified "2023-10-18" @default.
• W2050873145 title "Planarized ambipolar a-SiGe:H thin-film transistors: Influence of the sequence of fabrication process" @default.
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• W2050873145 doi "https://doi.org/10.1016/j.sse.2014.06.024" @default.
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