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• W2050902312 abstract "Beryllium was ion implanted into GaAs that had been previously amorphized by a liquid-nitrogen-temperature arsenic implant. After rapid thermal annealing complete electrical activation of the beryllium was indicated by carrier profiles measured by van der Pauw–Hall and electrochemical capacitance-voltage techniques. Diffusion of the beryllium profile as determined by secondary-ion-mass spectroscopy was suppressed in the arsenic-preamorphized layer. The combined effects of an amorphous layer to suppress ion channeling and excess arsenic to suppress diffusion resulted in a very abrupt beryllium-implanted layer. The high electrical activation of the ion-implanted beryllium represents what we believe is the first successful attempt to activate an impurity implanted into a preamorphized gallium arsenide layer." @default.
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• W2050902312 date "1990-06-15" @default.
• W2050902312 modified "2023-09-24" @default.
• W2050902312 title "Electrical activation of beryllium in preamorphized gallium arsenide" @default.
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• W2050902312 doi "https://doi.org/10.1063/1.344531" @default.
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