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- W2050946720 abstract "The effects of reactive atoms on microstructural changes in polycrystalline sintered α-SiC thin film specimens irradiated with 30 keV N2+ or 20 keV Ne+ at RT (room temperature) and isochronically annealed (400–900∘C) after irradiation were studied by TEM. Irradiation-induced amorphization occurred during irradiation at RT with both N2+ and Ne+ irradiation. Bubbles were also observed to form, but nitrogen bubbles were more difficult to form than Ne bubbles. To investigate the effects of nitrogen on recrystallization behavior, the specimens irradiated with high dose and low dose of N2+ were annealed, respectively. High nitrogen content depressed the epitaxial growth from the crystalline region to amorphous region, while the dependence of the recrystallization behavior on Ne dose was not clearly observed." @default.
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- W2050946720 date "2000-05-01" @default.
- W2050946720 modified "2023-10-14" @default.
- W2050946720 title "Amorphization with ion irradiation and recrystallization by annealing of SiC crystals" @default.
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- W2050946720 doi "https://doi.org/10.1016/s0168-583x(99)01065-4" @default.
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