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- W2051165862 abstract "Abstract Silicon diodes with pn-junction irradiated with high-energy krypton ions (energy 250 MeV, fluences from 10 8 to 10 9 cm -2 ) were studied, along with diodes irradiated with electrons (energy 3.5 MeV, fluence 10 15 cm −2 ). Diodes irradiated with krypton ions are different in the distance δ between the metallurgical border of the abrupt asymmetric p + n-junction and the maximum of primary vacancy distribution. Current-voltage characteristics and kinetics of reverse resistance recovery of two groups of diodes δ 1 ≈26.4 μm and δ 2 ≈14.5 μm were investigated. It is established that an increase in distance δ resulted in a minor effect on kinetics of reverse resistance recovery of diodes but allows to obtain the decrease of reverse currents by 2–3 times. It is shown that in the transient process of switching of the diodes irradiated with krypton ion fluence of 10 8 cm −2 , the time of reverse resistance recovery may be divided into two intervals (two phases), which are different in the rate of reverse current decrease." @default.
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- W2051165862 date "2009-12-01" @default.
- W2051165862 modified "2023-10-01" @default.
- W2051165862 title "Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250MeV krypton implantation" @default.
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- W2051165862 doi "https://doi.org/10.1016/j.physb.2009.08.129" @default.
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