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• W2051167762 abstract "Chemical liquid deposition was used to form Ga- and N-containing thin films on single-crystal silicon and sapphire substrates. Films were grown from a gallium carbodiimide-based polymeric precursor solution at room temperature on the substrates which were previously functionalized by amine-terminated self-assembled monolayers followed by pyrolysis in NH3 at 900 °C. On sapphire, epitaxial growth of hexagonal gallium nitride islands was found after pyrolysis. The composition, morphology and microstructure of the films were characterized by Auger electron spectroscopy, X-ray diffraction, and scanning and transmission electron microscopy." @default.
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• W2051167762 date "2002-01-01" @default.
• W2051167762 modified "2023-09-29" @default.
• W2051167762 title "Chemical liquid deposition of gallium nitride thin films on siloxane-anchored self-assembled monolayers" @default.
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• W2051167762 doi "https://doi.org/10.1016/s0254-0584(01)00393-5" @default.
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