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• W2051170226 endingPage "143" @default.
• W2051170226 startingPage "101" @default.
• W2051170226 abstract "The present review deals with effects caused by the presence of carbon in single-crystal silicon, as well as in some silicon-related materials. Three main areas are covered, with particular emphasis on the second one: (i) carbon as an impurity in silicon; (ii) carbon implanted in silicon at concentrations exceeding the solid solubility limit, but lower than the stoichiometric ratio for silicon carbide; and (iii) synthesis of silicon carbide layers by high-dose carbon implantation into silicon. It is shown that carbon implantation has a number of potential applications, such as reduction of secondary-defect density, gettering, etch stops for the formation of silicon-on-insulator structures, modification of the band gap and strain in heterostructures, and suppression of transient dopant diffusion. The fundamental material properties and their dependence on the process conditions are described and discussed in detail." @default.
• W2051170226 created "2016-06-24" @default.
• W2051170226 creator A5050273975 @default.
• W2051170226 creator A5069279110 @default.
• W2051170226 date "1996-05-01" @default.
• W2051170226 modified "2023-10-05" @default.
• W2051170226 title "Carbon-mediated effects in silicon and in silicon-related materials" @default.
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