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- W2051186898 abstract "The degradation process is studied on VPE GaAs0.1P0.9: N LED's prepared by Zn implantation for varying forward and stress current during stress time up to 1000 h. Using the scanning electron microscope the diffusion lengths of minority carriers, the doping profile, and the relative internal efficiencies of the p- and n-regions are obtained for different stress stages. The spectra and the decay of injection luminescence are measured as function of the forward current. The decrease of the diode light output is affected by the degradation of the p- and n-regions caused by REDR-processes. The defect-reaction induced changes of the doping profiles surrounding the p-n junction shift the carrier injection ratio to an increasing amount of electron injection into the more efficient p-region. Die Degradation von implantierten VPE GaAs0,1P0,9: N LED wird für veränderlichen Last- und Flußstrom im Belastungszeitraum bis zu 1000 h untersucht. Mit Hilfe des Elektronenrastermikroskops werden die Diffusionslängen der Minoritätsladungsträger, das Dotierungsprofil und die relative interne Quantenausbeute des p- und n-Gebietes für verschiedenen Belastungszustand beobachtet. In einem weiten Flußstrombereich werden die spektrale Verteilung der Injektionslumineszenz und ihr Abklingen gemessen. Die Lichtstärkeabnahme der Dioden während der Belastung beruht auf der Degradation sowohl des p- als auch des n-Gebietes. Die zur Degradation führenden REDR-Prozesse verändern das Dotierungsprofil in der Nähe des pn-Überganges und verursachen auf diese Weise eine Zunahme der Elektroneninjektion in das effizientere p-Gebiet." @default.
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- W2051186898 date "1983-06-16" @default.
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- W2051186898 title "Degradation of Yellow Light-Emitting GaAs0.1P0.9:N Diodes. 1. Implanted Diodes" @default.
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- W2051186898 doi "https://doi.org/10.1002/pssa.2210770216" @default.
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