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- W2051201877 abstract "We report the use of chalcogenidometallate clusters as a solution-processable precursor to SnSe2 for phase change memory applications. This precursor is spin-coated onto substrates and then thermally decomposed into a crystalline SnSe2 film. Laser testing of our SnSe2 films indicate very fast recrystallization times of 20 ns. We also fabricate simple planar SnSe2 electronic switching devices that demonstrate switching between ON and OFF resistance states with resistance ratios varying from 7−76. The simple cell design resulted in poor cycling endurance. To demonstrate the precursor’s applicability to advanced via-geometry memory devices, we use the precursor to create void-free SnSe2 structures inside nanowells of ∼25 nm in diameter and ∼40 nm in depth." @default.
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- W2051201877 date "2011-06-01" @default.
- W2051201877 modified "2023-10-17" @default.
- W2051201877 title "Electronic and optical switching of solution-phase deposited SnSe2 phase change memory material" @default.
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- W2051201877 doi "https://doi.org/10.1063/1.3587187" @default.
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